Determination of elements distribution within the small volume of sample and quantification of composition.
Specific information on the method:
- Analyzed volume is 1003 nm3 or slightly bigger
- Localization precision of atoms down to 1 nm
- Lowest detectable concentration 7 ppm
Specific information on the equipment/instrumentation:
Experiment is conducted at 30-70 K temperature. Laser pulsing mode allows easily to measure insulator and semiconductor materials. Time-of-flight mass spectrometry has resolution 1200 that is enough to resolve e.g. 35Zr+3 versus 12C+.
Sample is usually prepared by FIB (focused ion beam). A sharp needle should be formed. Mainly solid state samples, enough mechanically durable, UHV suitable are required.
Examples of typical analytical questions:
- 3D view of nanosize inclusions and different phase distribution in metal alloys
- Study of concentration profiles at interfaces and segregation of impurities at grain boundaries
- Distribution of dopants in semiconductor layers, quantum wells, dots and nanowires
Fields of research:
Materials for fuel cells, metal alloys, coatings, semiconductor devices and other electronic materials