The improvement of functional layers and interfaces in solar cells and solar modules relies on a precise analysis of their electronic and chemical properties.
Therefore a central requirement for the successful development of materials, devices and production technology is an extensive set of characterization methods and simulation capabilities that are used to analyze the optoelectronic properties of e.g. thin-film materials and related devices. These activities include all relevant length scales from atomistic resolution of nanostructures and elementary processes up to the yield analysis of modules or photovoltaic systems.
For Photovoltaic research, a multichamber deposition device with integrated in-situ analysis (JOSEPH) is installed at Forschungszentrum Juelich as a complement to Silicon In Situ Spectroscopy (SISSY) at HZB’s BESSY II light source.
By combining plasma analytics and large-area technology for PV devices at JOSEPH with synchrotron-based characterization of interfaces and growth processes at SISSY, advanced insight in the correlation between layer growth, chemical composition, microstructure, interface properties and device performance can be gained.